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| PIN Photodiodes PNZ331F PIN Photodiode Unit : mm 1 0. 0 1. o5.40.1 o4.60.05 o2.40.1 For optical fiber communication systems Features Metal package with shield pin High coupling capability suitable for plastic fiber and glass fiber High-speed response 14.20.5 (0.3) (0.5) High quantum efficiency 3.20.05 3-o0.450.04 o2.540.25 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 50 - 25 to +100 - 40 to +100 Unit V mW C C 2 3 1 1. 0 0. 1 45 3 1: Anode 2: Case 3: Cathode Dimensions of detection area 1.1 0.88 Active region A1 o0.1 Unit : mm Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Photo current Peak sensitivity wavelength Frequency characteristics Capacitance between pins Photodetection sensitivity Acceptance half angle Photodetection surface shape Symbol ID IL P fC*2 Ct R D VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50 VR = 10V VR = 10V, = 800nm Measured from the optical axis to the half power point Effective photodetection area 0.45 4 Conditions min typ 0.1 7 900 50 3 0.55 40 0.88 max 10 Unit nA A nm MHz pF A/W deg. mm Note 1) Spectral sensitivity : Sensitivity at wavelengths exceeding 400 nm as a percentage, is 100% to maximum sensitivity. Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) The glass strength of this product cannot withstand loads of 0.5 kg or greater. This fact needs to be taken into consideration if optical fibers are to be mounted on the product. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit (see figure below) Note : Detection photo current -3 dB Sig.IN P = 800nm 50 RL VR = 10V (Input pulse) Sig.OUT (Output pulse) td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,,, , 1 PNZ331F PIN Photodiodes PD -- Ta 60 10 2 VR = 10V Ta = 25C T = 2856K IL -- L 10 2 VR = 10V Ta = 25C = 800nm IL -- P 50 PD (mW) IL (A) 40 Power dissipation Photo current 30 1 Photo current 10 2 10 3 10 4 IL (A) 10 10 1 20 10 -1 10 -1 10 0 - 25 0 20 40 60 80 100 10 -2 10 10 -2 10 -1 1 10 10 2 Ambient temperature Ta (C ) Illuminance L (lx) Incident photo power P (W) ID -- VR 1 Ta = 25C 160 IL -- Ta VR = 10V L = 1000 lx T = 2856K 10 3 VR = 10V 10 2 ID -- Ta IL (%) ID (nA) ID (nA) Dark current 0 20 40 60 80 100 120 10 10 -1 Relative photo current Dark current 80 1 10 -1 40 10 -2 10 -2 0 8 16 24 32 0 - 40 - 20 10 -3 - 40 - 20 0 20 40 60 80 100 Reverse voltage VR (V) Ambient temperature Ta (C ) Ambient temperature Ta (C ) IL -- Ta 160 VR = 10V L = 1000 lx 100 Spectral sensitivity characteristics VR = 10V Ta = 25C 6 4 Frequency characteristics VR = 10V RL = 50 Ta = 25C IL (%) 120 S (%) 80 P (dB) Relative power output 2 0 -2 -4 -6 -8 Relative photo current 80 Relative sensitivity 60 40 40 20 0 - 40 - 20 0 20 40 60 80 100 0 200 400 600 800 1000 1200 - 10 1 10 10 2 10 3 Ambient temperature Ta (C ) Wavelength (nm) Frequency f (MHz) 2 PIN Photodiodes Coupling loss characteristics PNZ331F Coupling loss characteristics Ct -- V R 10 2 f = 1MHz Ta = 25C 0 LX , LY -- X, Y 0 Z = 0mm LX , LY -- X, Y Z = 0mm Z = 0.5mm Capacitance between pins Ct (pF) Coupling loss LX , LY (dB) 10 Z = 0.3mm -2 Coupling loss LX , LY (dB) Fiber Z o1mm 0.4 0.8 -1 -1 -2 1 -3 -3 10 -1 -4 VR = 10V Ta = 25C -5 - 0.8 - 0.4 Y X 0 -4 VR = 10V Ta = 25C -5 - 0.8 - 0.4 Y X 0 Fiber Z o0.2mm 0.4 0.8 10 -2 10 -1 1 10 10 2 Reverse voltage VR (V) Distance X, Y (mm) Distance X, Y (mm) Coupling loss characteristics 0 0 Coupling loss characteristics -1 -1 Coupling loss LZ (dB) -2 Coupling loss LZ (dB) Fiber Z o1mm 1.2 1.6 -2 -3 -3 -4 X,Y = 0mm VR = 10V Ta = 25C -5 0 0.4 0.8 Y X -4 X,Y = 0mm VR = 10V Ta = 25C -5 0 0.4 0.8 Y Fiber Z X o0.2mm 1.2 1.6 Distance Z (mm) Distance Z (mm) 3 |
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